Triode/MOS tube/transistor/module
GOFORD (valley peak)
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Infineon (Infineon)
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N-channel, 700V, 6.0A, 1.35~10V
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This NPN bipolar transistor is suitable for audio amplifier applications. The device is housed in a SOT-223 encapsulation and is suitable for medium power surface mount applications.
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N-channel, 60V, 0.3A, 7.5Ω@10V
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Infineon (Infineon)
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Type P VDSS(V) 100 VGS(V) 20 VTH(V) 1 IDS51°C(A) 0.8 RDS(Max) 700 PD51°C(W) 1.25
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Infineon (Infineon)
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N-channel, 650V, 11.4A, 310mΩ@10V
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NCE (Wuxi New Clean Energy)
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TI (Texas Instruments)
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CSD16556Q5B 25V NexFET N-Channel Power MosFET
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Infineon (Infineon)
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TECH PUBLIC (Taizhou)
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This P-channel enhancement mode power MOSFET is produced using planar stripe and DMOS proprietary technology. This advanced MOSFET technology is especially suited for low on-resistance, excellent switching performance and high avalanche energy strength. These devices are suitable for switch mode power supplies, audio amplifiers, DC motor control and variable switching power supply applications.
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