Triode/MOS tube/transistor/module
SPS (American source core)
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HXY MOSFET (Huaxuanyang Electronics)
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China Resources Huajing
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Infineon (Infineon)
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Dual N-channel, 20V, 5.2A, 0.05Ω@4.5V
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DIODES (US and Taiwan)
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YJB200G06B-F2-0000HF
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DIODES (US and Taiwan)
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DIODES (US and Taiwan)
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SUPERFET III MOSFETs are ON Semiconductor's new family of high-voltage super-junction (SJ) MOSFETs that utilize charge-balancing technology to achieve exceptionally low on-resistance and excellent performance in terms of lower gate charge. This advanced technology is designed to minimize conduction losses, provide excellent switching performance, and can withstand extreme dv/dt rates. Therefore, the SUPERFET III MOSFET Easy drive family helps manage EMI issues for easier design implementation.
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Configuration Single Type N-Ch VDS(V) 100 VGS(V) 20 ID(A)Max. 15 VGS(th)(v) 2 RDS(ON)(m?)@4.390V 115 Qg(nC)@4.5V - QgS(nC) 4.9 Qgd(nC) 5.8 Ciss(pF) 940 Coss(pF) 80 Crss(pF) 50
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TECH PUBLIC (Taizhou)
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Infineon (Infineon)
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P-channel, -100V, -4A, 1.2Ω@-10V
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The NCV8403 is a three-terminal protected low-side smart discrete device. Protection features include overcurrent, high temperature, ESD, and integrated drain-gate clamps for overvoltage protection. The device provides protection for harsh automotive environments.
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Slkor (Sakor Micro)
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