Triode/MOS tube/transistor/module

Transistor Type: NPN Collector-Emitter Breakdown Voltage (Vceo): -80V Collector Current (Ic): -1A Power (Pd): 1.5W Collector Cutoff Current (Icbo): 100nA Collector-Emitter Saturation Voltage (VCE (sat)@Ic,Ib): 500mV@500mA, 50mA DC current gain (hFE@Ic,Vce): 100@150mA, 2V

PNP

N channel

Small Signal MOSFET -12V -3.3A 60 mΩ Single P-Channel SC-88 with ESD Protection

Semiconductor Transistor Field Effect Transistor MOS tube, TO-263, N channel, withstand voltage: 150V, current: 157A, 10V internal resistance (Max): 0.0065Ω, power: 375W