Triode/MOS tube/transistor/module

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Type: P-Channel Drain-Source Voltage (Vdss): 60V Continuous Drain Current (Id): 45A Power (Pd): 52W On-Resistance (RDS(on)@Vgs,Id): 23mΩ@10V,15A Threshold Voltage ( Vgs(th)@Id): 1.6V@250uA Gate charge (Qg@Vgs): 25nC@10V Input capacitance (Ciss@Vds): 3.45nF@30V, Vds=60V Id=45A Rds=23mΩ, operating temperature: -55℃~+150℃@(Tj) DFN5*6encapsulation;

Type NPN IC(A) 1 VCBO(V) 160 VCEO(V) 160 VEBO(V) 6 VCE(sat)(V) 1.5

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PNP, 32V, 2A

Type: N-Channel Drain-Source Voltage (Vdss): 60V Continuous Drain Current (Id): 50A Power (Pd): 225mW On-Resistance (RDS(on)@Vgs,Id): 21mΩ@10V, 20A Threshold Voltage ( Vgs(th)@Id): 2.2V@250uA Operating temperature: -55 To 150℃@(Tj)

N-channel, 650V, 12A