Triode/MOS tube/transistor/module

N-channel, 600V, 7A, 700mΩ@10V

NPN, with resistor

NPN 117W 45V 15A Applications: low frequency large signal power amplification. ·Suitable for various intermediate power applications. ·Suitable for 12V audio and inverter circuits.

N-channel, 60V, 60A, 16mΩ@10V

NPN, Vceo=40V, Ic=0.2A, hfe=200~300

Semiconductor transistor field effect transistor MOS tube, DFN-8 3.3*3.3, N channel, withstand voltage: 20V, current: 40A, 10V internal resistance (Max): 4.5V internal resistance (Max): 0.0065Ω, power: 40W

N+N channel, 100V, 3A, 187mΩ@10V