Triode/MOS tube/transistor/module

NPN 300W 80V 50A Applications: Designed for applications in high power amplifiers and switching circuits

N-channel, 30V, 1.2A, 250mΩ@10V

NMOS, 40V/200A, RDS=2mR, nominal 24V battery dedicated for brushless controller (special for electric pick, high cost performance).

This PNP bipolar transistor is suitable for linear and switching applications. The device features SC-59 encapsulation and is suitable for low power surface mount applications.

Configuration Single Type N-Ch VDS(V) 200 VGS(V) 20 ID(A)Max. 18 VGS(th)(v) 3.5 RDS(ON)(m?)@4.406V - Qg(nC)@4.5V - QgS(nC) 5.2 Qgd(nC) 18 Ciss(pF) 1317 Coss(pF) 181 Crss(pF) 76

30V/200A N channel

N channel