Triode/MOS tube/transistor/module

The device is suitable for general purpose RF amplifier and mixer applications up to 250 mHz with collector currents in the 1.0 mA to 30 mA range. From Process 75.

HFE:200-350

This NPN bipolar transistor is suitable for linear and switching applications. The device features a SOT-23 encapsulation and is suitable for low power surface mount applications.

YJD80N03A-F2-3000HF

NPN, Vceo=20V, Ic=2A

NPN,Vceo=60V,Ic=1A