Triode/MOS tube/transistor/module

NPN, Vceo=50V, Ic=1A, hfe=120~240

This high voltage NPN bipolar transistor is suitable for general purpose amplifier applications. The device features a SOT-23 encapsulation and is suitable for low power surface mount applications.

Dual PNP, Vceo=-150V, Ic=-200mA

N-channel, 30V, 15A, 5.7mΩ@10V

SiCMOS tube, N-channel, 900V, 36A, 78mΩ@20A, 15V

Type: N-Channel Drain-Source Voltage (Vdss): 60V Continuous Drain Current (Id): 40A Power (Pd): 25W On-Resistance (RDS(on)@Vgs,Id): 6.5mΩ@10V,20A Threshold Voltage (Vgs(th)@Id): 1.7V@250uA Gate charge (Qg@Vgs): 16nC@10V Input capacitance (Ciss@Vds): 1.47nF@25V, Vds=60V Id=40A Rds=6.5mΩ, working Temperature: -55℃~+150℃@(Tj) DFN3*3encapsulation;