Triode/MOS tube/transistor/module

Type(N)/ESD(Y)/VDS30(V)/VGS20(±V)/VGS(th)0.8(V)/ID0.56(A)

N-channel, 30V, 1.4A, 110mΩ@10V

MOS, DFN-8 5*6, P channel, -40V, -63A, 11mΩ (Max), 74W

N tube, 45V, 90A, open 1.4V, 5mΩ@10V, 5.6mΩ@4.5V

Applications: communication modules, industrial control, artificial intelligence, consumer electronics

PNP-60V-3A

3Q Hi-Com Triac. Three-quadrant thyristor, 8A, withstand voltage 1000V

NPN

This single N-channel MOSFET is produced using the advanced UItraFET Trench process, which is specially adapted to minimize on-resistance while maintaining excellent switching performance.