Triode/MOS tube/transistor/module

Field effect transistor (MOSFET) type: P-channel drain-source voltage (Vdss): 30V continuous drain current (Id): 9A power (Pd): 2.5W on-resistance (RDS(on)@Vgs,Id): 20mΩ @10V,7A

Semiconductor Transistor Field Effect Transistor MOS tube, TO-252, N channel, withstand voltage: 100V, current: 55A, 10V internal resistance (Max): 0.016Ω, 4.5V internal resistance (Max): 0.025Ω, power: 100W

SuperFET MOSFETs are the first generation of high-voltage super-junction (SJ) MOSFET families utilizing charge-balancing technology to achieve exceptionally low on-resistance and excellent performance in terms of lower gate charge. This technology is specifically designed to minimize conduction losses, providing excellent switching performance, dv/dt rate and higher avalanche energy. Therefore, SuperFET MOSFETs are ideal for switching power supply applications such as PFC, server/telecom power supplies, FPD TV power supplies, ATX power supplies, and industrial power supply applications. The optimized body diode reverse recovery performance of the SuperFET FRFET MOSFET can eliminate additional components and improve system reliability.

NPN, Vceo=100V, Ic=3A

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Power MOSFET 60V 100A 4.0 mΩ Single N-Channel

Gear position: 100-200

DTA114ECA-F2-0000HF