Triode/MOS tube/transistor/module

Type: N-Channel Drain-Source Voltage (Vdss): 60V Continuous Drain Current (Id): 0.3A Power (Pd): 0.35W On-Resistance (RDS(on)@Vgs,Id): 0.95mΩ@10V,0.3 A Threshold voltage (Vgs(th)@Id): 1.5V@250uA Gate charge (Qg@Vgs): [email protected] Input capacitance (Ciss@Vds): 0.028nF@25V, Vds=60V Id=0.3A Rds=0.95mΩ, working temperature: -55℃~+150℃@(Tj)

N-channel, 200V, 35A, 58mΩ@10V

P channel -30V -12A, 11.5mΩ on-resistance

Semiconductor Transistor Field Effect Transistor MOS tube, SOT-23, N channel, withstand voltage: 30V, current: 10A, 10V internal resistance (Max): 0.017Ω, 4.5V internal resistance (Max): 0.025Ω, power: 1.4W

VDMOS single tube

P-channel, VDSS withstand voltage 30V, ID current 9A, RDON on-resistance 20mR@VGS 10V(MAX), VGS(th) turn-on voltage 1.0-3V,

This N-channel enhancement mode power MOSFET is produced using a planar stripe and DMOS proprietary process. This advanced MOSFET technology is designed for low on-resistance, excellent switching performance and high avalanche energy strength. These devices are suitable for use in switch-mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.

P channel -30V -3.5A

N-channel MOSFET. VDS=75V, ID=60A. On-resistance<8.5mR

This N-channel enhancement mode power MOSFET is produced using planar stripe and DMOS proprietary technology. This advanced MOSFET technology is designed for low on-resistance, excellent switching performance and high avalanche energy strength. These devices are suitable for switch mode power supplies, audio amplifiers, DC motor control and variable switching power supply applications.