Triode/MOS tube/transistor/module

These N-channel logic level MOSFETs are produced using the advanced PowerTrench process, which is specially suited to minimize on-resistance while maintaining excellent switching performance. These devices are suitable for low-voltage and battery-powered applications requiring in-line low power loss and fast switching.

P-channel, -30V, -4.1A

Polarity PNP Power Dissipation (W) 0.2 Maximum Collector Current (mA) 200 Collector- Base Voltage (V) 40 Saturation Voltage Drop (V) 0.3 Collector/ Base Current (mA) 18384 Maximum Working Frequency (MHz) 300

This NPN bipolar transistor is suitable for linear and switching applications. The device features a SOT-23 encapsulation and is suitable for low power surface mount applications.

NPN,Vceo=40V,Ic=0.2A