Triode/MOS tube/transistor/module

Power MOSFET, -30 V, -4.7 A, Single P-Channel, TSOP-6

60V 65A N-channel 6.8mΩ@10V TO-252

P-channel, -20V, -0.4A, 450mΩ@4.5V

Field Effect Transistor (MOSFET) Type: P Channel Drain-Source Voltage (Vdss): 20V Continuous Drain Current (Id): 5.0A Power (Pd): 1.32W On-resistance (RDS(on)@Vgs,Id: 28mΩ @4.5V, 4A Threshold voltage (Vgs(th)@Id): 0.7V@250uA Gate charge (Qg@Vgs): 8.8nC@10V Input capacitance (Ciss@Vds): 0.83nF@10V, Vds=20v Id =5.0A Rds=28mΩ, working temperature: -55℃~+150℃@(Tj) SOT-23-3encapsulation;

Polarity NPN Dissipated Power (W) 0.3 Maximum Collector Current (mA) 500 Collector- Base Voltage (V) 50 Saturation Voltage Drop (V) 0.7 Collector/ Base Current (mA) 500/50 Maximum operating frequency (MHz) 100

Transistor Type: NPN Collector-Emitter Breakdown Voltage (Vceo): 50V Collector Current (Ic): 150mA Power (Pd): 150mW Collector Cutoff Current (Icbo): 100nA Collector-Emitter Saturation Voltage (VCE(sat) @Ic,Ib): 100mV@100mA, 10mA DC current gain (hFE@Ic,Vce): 200@2mA, 6V Characteristic frequency (fT): 80MHz Operating temperature: +150℃@(Tj)

Type N VDSS(V) 100 VGS(V) 20 VTH(V) 1 IDS49°C(A) 2 RDS(Max) 320 PD49°C(W) 1.25