Triode/MOS tube/transistor/module

MOSFET N-channel, VDSS withstand voltage 20V, ID current 0.8A, RDON on-resistance 2.4mR@VGS 4.5V(MAX), VGS(th) turn-on voltage 0.5-1.0V

Type N VDS(V) 40V VGS(V) ±20V Vth(V) 1.7V RDS(ON)(mΩ) 10mΩ ID(A) 60A

Configuration Dual+ESD Type N-Ch VDS(V) 20 VGS(V) 12 ID(A)Max. 11 VGS(th)(v) 0.65 RDS(ON)(m?)@4.145V 7 Qg(nC)@ 4.5V 12.5 QgS(nC) 5.5 Qgd(nC) 6.5 Ciss(pF) 1256 Coss(pF) 220 Crss(pF) 168

This NPN bipolar transistor is suitable for general purpose amplifier applications. The device features a SOT-323/SC-70 encapsulation and is suitable for low power surface mount applications.

N-channel, 600V, 9.2A, 450mΩ@10V

N-channel, 600V, 9.2A, 450mΩ@10V

N-channel, 20V, 6.8A (Ta)