Triode/MOS tube/transistor/module

Configuration Single Type P-Ch VDS(V) -30 VGS(V) 20 ID(A)Max. -120 VGS(th)(v) -1.5 RDS(ON)(m?)@4.235V 5 Qg(nC) @4.5V 135 QgS(nC) 12 Qgd(nC) 36 Ciss(pF) 6100 Coss(pF) 1130 Crss(pF) 1110

Collector-base reverse breakdown voltage 700V, collector-emitter reverse breakdown voltage 400V, amplification factor 10-40, collector current IC1.5A

Transistor Applications: Uninterruptible Power Supply Solar Inverter Welding PFC Application

This PNP bipolar transistor is suitable for linear and switching applications. The device features a SOT-23 encapsulation and is suitable for low power surface mount applications.

Drain-source voltage (V) -50 Continuous drain current (Id) (A) -0.17 Threshold voltage (V) -2 Power (W) 0.225 On-resistance 50V (Ω) 8000 Input capacitance (pF) 30