Triode/MOS tube/transistor/module

Power MOSFET, 6 A, 20 V, P-Channel, SOIC?8, Dual

N-channel, 500V, 8A, 850mΩ@10V

Configuration Single Type N-Ch VDS(V) 30 VGS(V) 20 ID(A)Max. 85 VGS(th)(v) 1.7 RDS(ON)(m?)@4.193V 2.5 Qg(nC)@4.5V 26 QgS(nC) 9.5 Qgd(nC) 11.4 Ciss(pF) 3000 Coss(pF) 1280 Crss(pF) 160

N-channel, 800V, 1.8A, 6.5Ω@10V

Configuration Single Type N-Ch VDS(V) 40 VGS(V) 20 ID(A)Max. 190 VGS(th)(v) - RDS(ON)(m?)@4.210V 1.8 Qg(nC)@4.5V 35 QgS(nC) 15 Qgd(nC) 9 Ciss(pF) 5400 Coss(pF) 1200 Crss(pF) 180