Triode/MOS tube/transistor/module

Transistor type: PNP Collector-emitter breakdown voltage (Vceo): 65V Collector current (Ic): 100mA Power (Pd): 200mW DC current gain (hFE@Ic,Vce): 125@2mA, 5V BC856A-F2-0000HF

Dual NPN, Vceo=45V, Ic=100mA

N-channel JFET

N-channel JFET

This power MOSFET has low on-resistance. This device is suitable for applications such as power switches in portable equipment. Best suited for 1 to 2 cell Li-ion battery applications.