Triode/MOS tube/transistor/module

P-channel, -12V, -4.1A

Type: P-Channel Drain-Source Voltage (Vdss): 40V Continuous Drain Current (Id): 60A Power (Pd): 30W On-Resistance (RDS(on)@Vgs,Id): 11mΩ@10V,12A Threshold Voltage ( Vgs(th)@Id): 1.7V@250uA Gate Charge (Qg@Vgs): 72nC@10V Input Capacitance (Ciss@Vds): 2.66nF@20V Operating Temperature: -55℃~+150℃@(Tj)

PNP, Vceo=-45V, Ic=-500mA, hfe=250~600

NPN,Vceo=40V,Ic=200mA

NPN, 50V, 100mA

N-channel, 30V, 15A, 7.5mΩ@10V

This single N-channel MOSFET is produced using the advanced PowerTrench process, which is specially adapted to minimize on-resistance while maintaining excellent switching performance.

Dual PNP, -50V, -100mA